Premium
Luminescence spectroscopy of Eu‐implanted zincblende GaN
Author(s) -
Roqan I. S.,
O'Donnell K. P.,
TragerCowan C.,
Hourahine B.,
Martin R. W.,
Lorenz K.,
Alves E.,
As D. J.,
Panfilova M.,
Watson I. M.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200743372
Subject(s) - cathodoluminescence , wurtzite crystal structure , photoluminescence , materials science , luminescence , annealing (glass) , optoelectronics , spectroscopy , emission spectrum , gallium nitride , nanotechnology , spectral line , physics , quantum mechanics , astronomy , zinc , metallurgy , composite material , layer (electronics)
Cathodoluminescence (CL) and Photoluminescence (PL) of Eu‐implanted zincblende‐GaN (ZB‐GaN:Eu) and wurtzite‐GaN (W‐GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The Eu 3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post‐annealing at 800 °C partially converts implantation‐damaged ZB‐GaN:Eu to W‐GaN:Eu. Selective excitation of PL at wavelengths below the ZB‐GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB‐GaN:Eu. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)