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Effects of hydrostatic pressure on the donor binding energy and intra donor transition matrix elements in GaAs–GaAlAs quantum wells
Author(s) -
Panahi H.,
Maleki M.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200743354
Subject(s) - hydrostatic pressure , impurity , excited state , binding energy , ground state , chemistry , matrix (chemical analysis) , quantum well , atomic physics , hydrostatic equilibrium , position (finance) , effective mass (spring–mass system) , condensed matter physics , physics , thermodynamics , quantum mechanics , laser , organic chemistry , finance , chromatography , economics
Abstract The effects of hydrostatic pressure on the donor binding energy in GaAs–Ga 0.7 Al 0.3 As quantum wells have been studied in the effective mass approximation, using a variational approach for hydrogenic ground state 1s and excited states 2s, 2p x , 3p x . Results obtained show that the donor binding energy variation with the well width and the position of impurity under pressure is similar to that without pressure. The intra donor squared transition matrix elements are calculated as functions of impurity position in the presence of hydrostatic pressure. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)