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Doping asymmetry in wide‐bandgap semiconductors: Origins and solutions
Author(s) -
Yan Yanfa,
Wei SuHuai
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200743334
Subject(s) - doping , semiconductor , asymmetry , materials science , wide bandgap semiconductor , optoelectronics , bottleneck , band gap , obstacle , semiconductor materials , nanotechnology , engineering physics , computer science , physics , political science , quantum mechanics , law , embedded system
Wide‐bandgap (WBG) semiconductors are essential materials for making short‐wavelength and transparent optoelectronic devices. However, a serious obstacle to realizing WBG semiconductor‐based devices is their common doping asymmetry problem, i.e., a WBG semiconductor can be doped easily either p‐type or n‐type, but not both. This paper reviews the possible origins for doping asymmetry problems and updates our recent progress in searching for approaches to overcome the doping bottleneck in WBG semiconductors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)