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Silicon nano particles: Surface characterization, defects and electronic properties
Author(s) -
Hahn Torsten,
Heimfarth Jan P.,
Roewer Gerhard,
Kroke Edwin
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200743296
Subject(s) - dangling bond , electron paramagnetic resonance , materials science , photoluminescence , spectroscopy , silicon , analytical chemistry (journal) , fourier transform infrared spectroscopy , chemistry , nuclear magnetic resonance , chemical engineering , optoelectronics , organic chemistry , physics , quantum mechanics , engineering
Nano scaled silicon particles (nc‐Si) having a diameter of about 3 to 9 nm were synthesized by direct reduction of SiCl 4 with H 2 in a LaCl 3 matrix by a vapour deposition (CVD) route. The particles were characterized by diffuse reflection fourier transform spectroscopy (DR/FT‐IR), photoluminescence (PL), electron paramagnetic resonance (EPR) and microwave detected photo induced current transient spectroscopy (MD‐PICTS). EPR measurements identified dangling bond defects on the surface of as‐prepared nc‐Si particles in the LaCl 3 matrix. The number of dangling bonds significantly decreases upon extraction of the nc‐Si with ethanol. As expected, the dangling bonds disappear completely after treatment with 1% HF solution. A strong correlation between presence of dangling bond defects and electronic properties was found. The temperature dependent photoconductivity in conjunction with the EPR and PL results allowed us to analyze the defect structure of the nc‐Si particles. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)