Comparison of deep level spectra in p‐type and n‐type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)] | Zendy

Armstrong A. | Zendy; Corrion A. | Zendy; Poblenz C. | Zendy; Mishra U. K. | Zendy; Speck J. S. | Zendy; Ringel S. A. | Zendy

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Comparison of deep level spectra in p‐type and n‐type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

Author(s) -

Armstrong A.,

Corrion A.,

Poblenz C.,

Mishra U. K.,

Speck J. S.,

Ringel S. A.

Publication year - 2007

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200740116

Subject(s) - molecular beam epitaxy , type (biology) , epitaxy , spectral line , stat , chemistry , materials science , optoelectronics , physics , nanotechnology , geology , quantum mechanics , biochemistry , stat3 , layer (electronics) , paleontology , apoptosis

The following author has to be added to the list of authors in phys. stat. sol. (b) 244 , 1867 (2007): A. Corrion, Department of Materials and Electrical and Computer Engineering, University of California, Santa Barbara, USA. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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