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Comparison of deep level spectra in p‐type and n‐type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]
Author(s) -
Armstrong A.,
Corrion A.,
Poblenz C.,
Mishra U. K.,
Speck J. S.,
Ringel S. A.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200740116
Subject(s) - molecular beam epitaxy , type (biology) , epitaxy , spectral line , stat , chemistry , materials science , optoelectronics , physics , nanotechnology , geology , quantum mechanics , biochemistry , stat3 , layer (electronics) , paleontology , apoptosis
The following author has to be added to the list of authors in phys. stat. sol. (b) 244 , 1867 (2007): A. Corrion, Department of Materials and Electrical and Computer Engineering, University of California, Santa Barbara, USA. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)