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Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X‐ray microdiffraction
Author(s) -
Drakopoulos M.,
Laügt M.,
Riemann T.,
Beaumont B.,
Gibart P.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200690013
Subject(s) - sapphire , epitaxy , diffraction , dislocation , nitride , materials science , position (finance) , curvature , optics , crystal (programming language) , condensed matter physics , crystallography , x ray crystallography , optoelectronics , physics , geometry , laser , chemistry , nanotechnology , mathematics , layer (electronics) , computer science , finance , economics , programming language
The cover picture from the article [1] depicts the geometry of X‐ray diffraction on a GaN/sapphire structure made by a two‐step epitaxial lateral overgrowth (2S‐ELO) process. Below, the X‐ray rocking curve as a function of the vertical beam position in 2S‐ELO GaN/sapphire is shown. A low intensity line diverging from the main peak position (arrow) may be interpreted as the disappearance of a winged crystal region due to dislocation curvature. This paper is a presentation from the 6th International Conference on Nitride Semiconductors held in Bremen, Germany, in 2005. Further articles from ICNS‐6 are also being published in phys. stat. sol. (a) 203 , No. 7 (2006) and phys. stat. sol. (c) 3 , No. 6 (2006).