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The growth of high quality GaMnAs layers and heterostructures by molecular beam epitaxy
Author(s) -
Campion R. P.,
Grant V. A.,
Edmonds K. W.,
Gallagher B. L.,
Foxon C. T.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200675624
Subject(s) - molecular beam epitaxy , heterojunction , annealing (glass) , materials science , optoelectronics , epitaxy , nanotechnology , metallurgy , layer (electronics)
The growth of high quality GaMnAs layers and heterostructures by low‐temperature molecular beam epitaxy is discussed in detail in this article, together with the annealing procedures used to remove Mn interstitials, which degrade the performance of the films and devices. Examples of the use of this technique for lateral and vertical transport devices are also mentioned briefly in the article. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)