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MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics
Author(s) -
Tournié Eric,
Trampert Achim
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200675623
Subject(s) - compound semiconductor , heterojunction , optoelectronics , interface (matter) , materials science , semiconductor , nanotechnology , epitaxy , layer (electronics) , composite material , capillary number , capillary action
We give a bird's‐eye view of the interface formation during MBE growth of various quasi lattice‐matched as well as highly‐mismatched semiconductor heterostructures. We show that the parameters controlling the growth mode and the interface formation are numerous and that the optimum interface configuration depends on the materials system and on the target application. Our results obtained from various semiconductor materials systems demonstrate that this growth and interface‐related problem is much more complex than it has often been considered for many years. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)