Premium
Dilute nitride Ga(NAsP)/GaP‐heterostructures: toward a material development for novel optoelectronic functionality on Si‐substrate
Author(s) -
Kunert B.,
Volz K.,
Stolz W.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200675609
Subject(s) - optoelectronics , heterojunction , materials science , substrate (aquarium) , nitride , nanotechnology , layer (electronics) , biology , ecology
Abstract The current status of the development of the novel dilute nitride Ga(NAsP)/GaP for the monolithic integration of optoelectronic functionality to Si is summarized from the concept, design and epitaxial optimization to the verification of direct energy gap and the realization of electrical injection laser devices at room temperature. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)