Premium
Effects of growth temperature and oxygen pressure on the properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates by pulsed laser deposition
Author(s) -
Liu Chunli,
Chang S. H.,
Noh T. W.,
Song J.H.,
Xie J.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200675127
Subject(s) - sapphire , materials science , photoluminescence , pulsed laser deposition , thin film , optoelectronics , exciton , deposition (geology) , laser , analytical chemistry (journal) , nanotechnology , optics , condensed matter physics , chemistry , paleontology , physics , chromatography , sediment , biology
Abstract We report a systematic study on the effect of growth temperature and O 2 pressure on the structural, optical, and electrical properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. The combination of high growth temperature and low O 2 pressure was found to improve the crystalline quality of initial heteroepitaxial ZnO films, which can be attributed to the enhanced surface migration of adatoms and thermal energy. The low‐temperature photoluminescence spectra from ZnO films were dominated by donor‐bound exciton emission with very weak deep level emission. The temperature dependent Hall measurement showed that the films are highly degenerated, mainly due to the high defect density near the interface region. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)