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Low temperature growth of ZnO thin film by metalorganic chemical vapor deposition
Author(s) -
Kim Dong Chan,
Kong Bo Hyun,
Cho Hyung Koun,
Lee Jeong Yong,
Park Dong Jun
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200675121
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , materials science , thin film , microstructure , substrate (aquarium) , crystallite , conductivity , sputtering , chemical engineering , combustion chemical vapor deposition , deposition (geology) , analytical chemistry (journal) , carbon film , optoelectronics , epitaxy , composite material , nanotechnology , metallurgy , chemistry , layer (electronics) , environmental chemistry , oceanography , geology , engineering , paleontology , sediment , biology
Polycrystalline ZnO thin films with a preferred orientation were successfully grown by metal organic chemical vapor deposition at temperatures ≤300 °C. By injecting additional Ar gas through a by‐pass line, good quality ZnO films were grown at low temperature. The ZnO films grown at substrate temperatures <200 °C showed a porous microstructure whereas a dense undoped ZnO film showing a high conductivity and no Zn phases was grown at 210 °C. The ZnO film grown at low temperatures by MOCVD showed improved emission properties compared with the films grown by sputtering. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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