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Study on defect states using deep level transient spectroscopy of ZnO grown by pulsed laser deposition
Author(s) -
Kim JaeHoon,
Kim Eun Kyu
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200675118
Subject(s) - deep level transient spectroscopy , materials science , pulsed laser deposition , photoluminescence , optoelectronics , schottky diode , sapphire , band gap , analytical chemistry (journal) , substrate (aquarium) , spectroscopy , diffraction , schottky barrier , laser , diode , thin film , optics , chemistry , nanotechnology , silicon , physics , oceanography , chromatography , quantum mechanics , geology
The pulsed laser deposition (PLD) was used for fabrication of ZnO films on a sapphire substrate. We modulated the parameters, temperature and gas pressure, for the growth condition. After the growth, X‐ray diffraction, photoluminescence (PL), and deep level transient spectroscopy (DLTS) measurements were performed. We had got PL spectra of high intensity from the ZnO film grown at low temperature. And the existence of the defect states was fewer, according to the result. But the crystalline quality was good for the film grown at high temperature. It seems to be that the relation between crystallization and defined electronic bandgap is weak. The DLTS measurements show some defects, but the signal is noisy. A Schottky contact by using Ti/Au and a high conductance seem to be the cause. We had simulated the DLTS spectra from assumed defects and matched to measurement results. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)