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Investigation of ZnO substrates: effects of high temperature annealing
Author(s) -
Graubner S.,
Neumann C.,
Krost A.,
Bläsing J.,
Meyer B. K.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200675115
Subject(s) - annealing (glass) , materials science , atomic force microscopy , polishing , resistive touchscreen , nanotechnology , electrical resistivity and conductivity , optoelectronics , metallurgy , electrical engineering , engineering
In order to promote growth of ZnO films on ZnO substrates, defects introduced by the surface polishing procedure have to be removed. We investigate the influence of high temperature annealing in O 2 ‐atmosphere on the structural properties of the ZnO substrates by atomic force microscopy. Only at temperatures above 1100 °C atomic steps (terraces) are seen, the remaining defects can be assigned to dislocations in a density between 10 4 to 10 5 cm –2 . Interestingly the electrical properties also change from high resistive to n‐type conduction, which make the substrates – apart for the homoepitaxial growth on a perfect template – suitable for top‐to‐bottom contacts. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)