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Electrical characterization of ZnO nanorods
Author(s) -
Schlenker E.,
Bakin A.,
Postels B.,
Mofor A. C.,
Wehmann H.H.,
Weimann T.,
Hinze P.,
Waag A.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200675111
Subject(s) - nanorod , ohmic contact , materials science , schottky diode , substrate (aquarium) , nanotechnology , optoelectronics , conductive atomic force microscopy , electrical resistivity and conductivity , atomic force microscopy , electrical conductor , electrode , lithography , diode , chemistry , composite material , layer (electronics) , oceanography , engineering , geology , electrical engineering
Zinc oxide (ZnO) nanorods were grown by a wet chemical approach and by vapor phase transport. To explore the electrical properties of individual nanostructures current–voltage ( I – V ) characteristics were obtained by using an atomic force microscope (AFM) with a conductive tip or by detaching the nanorods from the growth substrate, transferring them to an isolating substrate and contacting them with evaporated Ti/Au electrodes patterned by electron‐beam lithography. The AFM‐approach only yields a Schottky diode behavior, while the Ti/Au forms ohmic contacts to the ZnO. For the latter method the obtained I – V curves reveal a resistivity of the nanorods in the order of 10 –5 Ω cm which is unusually low for undoped ZnO. We therefore assume the existence of a highly conductive surface channel. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)