Selective growth of GaN nanocolumns by Al thin layer on substrate | Zendy

Ishizawa Shunsuke | Zendy; Sekiguchi Hiroto | Zendy; Kikuchi Akihiko | Zendy; Kishino Katsumi | Zendy

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Selective growth of GaN nanocolumns by Al thin layer on substrate

Author(s) -

Ishizawa Shunsuke,

Sekiguchi Hiroto,

Kikuchi Akihiko,

Kishino Katsumi

Publication year - 2007

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200674911

Subject(s) - substrate (aquarium) , materials science , layer (electronics) , optoelectronics , enhanced data rates for gsm evolution , nitriding , nanotechnology , epitaxy , computer science , telecommunications , biology , ecology

For the application of GaN nanocolumns, one of the most important issues is to control their shapes and positions. We demonstrated a selective RF‐MBE growth of GaN nanocolumns using patterned Al thin pre‐deposited layers on a substrate via their nitridation. As the nanocolumns were grown at the edge of the nitrided Al patterns, a possibility of controlling the shape and the position of nanocolumns was suggested. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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