Premium
Selective growth of GaN nanocolumns by Al thin layer on substrate
Author(s) -
Ishizawa Shunsuke,
Sekiguchi Hiroto,
Kikuchi Akihiko,
Kishino Katsumi
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200674911
Subject(s) - substrate (aquarium) , materials science , layer (electronics) , optoelectronics , enhanced data rates for gsm evolution , nitriding , nanotechnology , epitaxy , computer science , telecommunications , biology , ecology
For the application of GaN nanocolumns, one of the most important issues is to control their shapes and positions. We demonstrated a selective RF‐MBE growth of GaN nanocolumns using patterned Al thin pre‐deposited layers on a substrate via their nitridation. As the nanocolumns were grown at the edge of the nitrided Al patterns, a possibility of controlling the shape and the position of nanocolumns was suggested. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)