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Epitaxial growth of aligned GaN nanowires and nanobridges
Author(s) -
Kim Kyungkon,
Henry Tania,
Cui George,
Han Jung,
Song YoonKyu,
Nurmikko Arto V.,
Tang Hong
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200674843
Subject(s) - nanowire , epitaxy , materials science , optoelectronics , substrate (aquarium) , hexagonal crystal system , nanotechnology , gallium nitride , crystallography , layer (electronics) , chemistry , oceanography , geology
Homo‐epitaxialy grown aligned GaN nanowires were prepared on crystalline GaN mesas. The GaN nanowires showed preferential growth along the 〈10 $ \bar 1 $ 0〉 direction ( m ‐axis direction). By using selectively positioned and crystallographically well defined GaN epitaxial lateral overgrowth (ELO) mesas as substrate, we obtained horizontally aligned GaN nanowires, in comb‐like arrays and hexagonal network interconnecting the ELO mesas. Preliminary testing of the nanomechanical behavior of horizontal nanowires is reported. Combination of ELO with nanowire synthesis is expected to provide a new paradigm for nano‐electronic and electromechanical devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)