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Recent developments in the III‐nitride materials
Author(s) -
Monemar B.,
Paskov P. P.,
Bergman J. P.,
Toropov A. A.,
Shubina T. V.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200674836
Subject(s) - scope (computer science) , limiting , nitride , nanotechnology , materials science , alloy , engineering physics , selection (genetic algorithm) , computer science , physics , metallurgy , engineering , mechanical engineering , layer (electronics) , programming language , artificial intelligence
We review a selection of recent research work on III‐nitride materials, limiting the scope to bulk properties and quantum well structures. The different stages of development of the compounds AlN, GaN and InN are illustrated, with reference to the electronic properties demonstrated so far. The important alloy systems Al x Ga 1– x N and In x Ga 1– x N have quite different properties, still not understood in detail for high Al and In contents, respectively. Some important unresolved issues are highlighted, and possible future directions of the materials development are indicated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)