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Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X‐ray diffraction analyses
Author(s) -
Inaba Katsuhiko,
Amano Hiroshi
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200674812
Subject(s) - epitaxy , polar , characterization (materials science) , crystallinity , polarity (international relations) , diffraction , crystallography , materials science , x ray crystallography , lattice (music) , chemistry , optics , nanotechnology , physics , biochemistry , layer (electronics) , astronomy , acoustics , cell
We have succeeded in fabricating a prototype of a new X‐ray diffraction (XRD) system that enables both conventional high resolution XRD (HR‐XRD) and crystallographic polarity characterization in the laboratory. By applying a polarity characterization with XRD to a polar GaN epitaxial film, it was determined that a polar GaN film grows in the Ga‐polar direction. On studying a nonpolar GaN film it was revealed that the polar direction lying in the surface plane of the film can be identified by analyzing the asymmetric lattice planes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)