Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X‐ray diffraction analyses | Zendy

Inaba Katsuhiko | Zendy; Amano Hiroshi | Zendy

Premium

Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X‐ray diffraction analyses

Author(s) -

Inaba Katsuhiko,

Amano Hiroshi

Publication year - 2007

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200674812

Subject(s) - epitaxy , polar , characterization (materials science) , crystallinity , polarity (international relations) , diffraction , crystallography , materials science , x ray crystallography , lattice (music) , chemistry , optics , nanotechnology , physics , biochemistry , layer (electronics) , astronomy , acoustics , cell

We have succeeded in fabricating a prototype of a new X‐ray diffraction (XRD) system that enables both conventional high resolution XRD (HR‐XRD) and crystallographic polarity characterization in the laboratory. By applying a polarity characterization with XRD to a polar GaN epitaxial film, it was determined that a polar GaN film grows in the Ga‐polar direction. On studying a nonpolar GaN film it was revealed that the polar direction lying in the surface plane of the film can be identified by analyzing the asymmetric lattice planes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research