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Reduction in defect density over whole area of (1 $ \bar 1 $ 00) m ‐plane GaN using one‐sidewall seeded epitaxial lateral overgrowth
Author(s) -
Kawashima T.,
Nagai T.,
Iida D.,
Miura A.,
Okadome Y.,
Tsuchiya Y.,
Iwaya M.,
Kamiyama S.,
Amano H.,
Akasaki I.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200674805
Subject(s) - stacking , materials science , epitaxy , photoluminescence , substrate (aquarium) , plane (geometry) , dislocation , terrace (agriculture) , optoelectronics , bar (unit) , seeding , condensed matter physics , crystallography , layer (electronics) , geometry , chemistry , nanotechnology , composite material , geology , physics , mathematics , oceanography , organic chemistry , archaeology , history , thermodynamics
We succeeded in growing low‐defect‐density m ‐plane GaN on grooved m ‐plane GaN with SiO 2 masks on the terrace region. By changing the V/III ratio, we were able to increase the growth rate of GaN on one sidewall, thereby achieving one‐sidedwall lateral growth. Dislocations and stacking faults were decreased markedly over the whole area. The densities of dislocations and stacking faults were 1.3 × 10 7 (cm –2 ) and <2.6 × 10 4 (cm –1 ), respectively. The photoluminescence intensity was 213 times higher than that of an m ‐plane GaN template on an m ‐plane 4H‐SiC substrate. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)