First‐principles calculation and X‐ray absorption fine structure analysis of Fe doping mechanism for semi‐insulating GaN growth on GaAs substrates | Zendy

Togashi R. | Zendy; Satoh F. | Zendy; Murakami H. | Zendy; Iihara J. | Zendy; Yamaguchi K. | Zendy; Kumagai Y. | Zendy; Koukitu A. | Zendy

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First‐principles calculation and X‐ray absorption fine structure analysis of Fe doping mechanism for semi‐insulating GaN growth on GaAs substrates

Author(s) -

Togashi R.,

Satoh F.,

Murakami H.,

Iihara J.,

Yamaguchi K.,

Kumagai Y.,

Koukitu A.

Publication year - 2007

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200674759

Subject(s) - x ray absorption fine structure , wurtzite crystal structure , materials science , doping , substrate (aquarium) , hydride , epitaxy , absorption (acoustics) , optoelectronics , crystallography , analytical chemistry (journal) , nanotechnology , chemistry , metallurgy , metal , spectroscopy , zinc , composite material , oceanography , physics , layer (electronics) , quantum mechanics , chromatography , geology

In order to fabricate an Fe‐doped semi‐insulating (SI) GaN substrate by hydride vapor phase epitaxy (HVPE) using (111)A GaAs as a starting substrate, the Fe doping mechanism was investigated by two approaches: first‐principles calculation and X‐ray absorption fine structure (XAFS) measurements. First‐principles study clarified that Fe and As atoms are substituting for the Ga and N atoms in the wurtzite GaN lattice, respectively. In addition, incorporation of Fe in GaN was found to be hindered by adjacent As in the N site. XAFS analysis performed for an Fe‐doped SI GaN substrate, obtained by protecting backside of the GaAs substrate, showed that the Fe atoms are substituting for the Ga site in GaN. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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