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MOCVD regrowth of InGaN on N‐polar and Ga‐polar pillar and stripe nanostructures
Author(s) -
Fichtenbaum N. A.,
Neufeld C. J.,
Schaake C.,
Wu Y.,
Wong M. H.,
Grundmann M.,
Keller S.,
DenBaars S. P.,
Speck J. S.,
Mishra U. K.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200674753
Subject(s) - nanopillar , metalorganic vapour phase epitaxy , materials science , transmission electron microscopy , polar , nanostructure , scanning electron microscope , chemical vapor deposition , bar (unit) , optoelectronics , nanotechnology , scanning transmission electron microscopy , epitaxy , layer (electronics) , composite material , physics , astronomy , meteorology
N‐polar (000 $ \bar 1 $ ) and Ga‐polar (0001) GaN templates were patterned with holographic lithography and etched to form nanopillars (NP) and nanostripes (NS) arrays, upon which InGaN and GaN was subsequently regrown by metal organic chemical vapor deposition (MOCVD). A wide range of growth conditions were explored to determine the structural impact of the growth conditions. The results were evaluated by scanning electron microscopy (SEM), and transmission electron microscopy (TEM). It was observed that the initial polarity of the GaN template used to form the pillar or stripe nanostructures had a significant impact upon the results of the regrowth. The Ga‐polar NP exhibited (0001), {01 $ \bar 1 $ 0}, and {01 $ \bar 1 $ 1} facets, while the N‐polar NP exhibited (000 $ \bar 1 $ ) and {01 $ \bar 1 $ 0} facets. The NS samples also exhibited different facet formation depending upon the initial polarity. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)