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Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells
Author(s) -
Keller S.,
Fichtenbaum N. A.,
Schaake C.,
Neufeld C. J.,
David A.,
Matioli E.,
Wu Y.,
DenBaars S. P.,
Speck J. S.,
Weisbuch C.,
Mishra U. K.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200674752
Subject(s) - nanopillar , materials science , optoelectronics , photoluminescence , wafer , annealing (glass) , quantum well , planar , reactive ion etching , etching (microfabrication) , nanotechnology , optics , nanostructure , composite material , laser , computer science , physics , computer graphics (images) , layer (electronics)
GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminescence, the etch related damage was successfully healed through annealing in NH 3 /N 2 mixtures under optimized conditions, and the annealed nanopatterned samples exhibited enhanced photoluminescence (PL) compared to the planar wafers. Angular‐resolved PL measurements revealed extraction of guided modes from the nanopillar and nanostripe arrays (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)