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Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers
Author(s) -
Hild Konstanze,
Sweeney Stephen J.,
Marko Igor P.,
Jin Shirong R.,
Johnson Shane R.,
Chaparro Sergio A.,
Yu Shuiqing,
Zhang YongHang
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672571
Subject(s) - radiative transfer , auger effect , recombination , quantum well , spontaneous emission , materials science , current (fluid) , atomic physics , laser , condensed matter physics , auger , chemistry , physics , thermodynamics , optics , biochemistry , gene
We investigated the temperature and pressure dependence of carrier recombination processes occurring in GaAsSb edge‐emitting lasers operating near 1.3 μm. Below ∼100 K, the threshold current, I th , is dominated by the radiative current, I rad , and is proportional to temperature, T . However, above 100 K, non‐radiative recombination increases abruptly such that by 125 K it accounts for 40% of I th . From high pressure measurements at this temperature, we find that the non‐radiative current decreases with increasing pressure, consistent with the presence of Auger recombination. At room temperature, non‐radiative recombination accounts for ∼90% I th and gives rise to a super‐linear temperature dependence of I th , in spite of the fact that I rad ∝ T . At room temperature the non‐radiative current increases with increasing pressure, indicating that under ambient operating conditions, the devices are also limited by carrier leakage into the Γ‐minimum of the GaAs barriers and possibly also into the X‐minima of the GaAsP confining layers. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)