Premium
X‐ray diffraction study of amorphous phase of BaSi 2 under high pressure
Author(s) -
Nishii T.,
Mizuno T.,
Mori Y.,
Takarabe K.,
Imai M.,
Kohara S.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672563
Subject(s) - diffraction , synchrotron , phase (matter) , crystallography , materials science , amorphous solid , compressibility , high pressure , rietveld refinement , bond length , x ray crystallography , crystal structure , chemistry , thermodynamics , optics , physics , organic chemistry
A high‐pressure synchrotron X‐ray diffraction study of zintl phase BaSi 2 semiconductor has been performed up to 45 GPa. The pressure‐induced amorphization occurred at 13 GPa. In the amorphous phase, the Ba–Si bond distance decreased with increasing pressure, while the Ba–Ba bond distances were almost unchanged. The Rietveld refinement revealed that these distances in the crystal phase decreased with increasing pressure. By combining these results, the Ba–Si bond compressibility in both phases is almost identical. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)