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Structural changes in amorphous chalcogenide semiconductors under high pressure: a Raman study
Author(s) -
Boulmetis Y. C.,
Stavrou E.,
Raptis C.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672553
Subject(s) - chalcogenide , raman spectroscopy , ternary operation , amorphous solid , stoichiometry , hydrostatic pressure , chalcogenide glass , materials science , crystallography , analytical chemistry (journal) , chemistry , thermodynamics , optics , metallurgy , organic chemistry , physics , computer science , programming language
The Raman spectra of binary As–S and ternary Ge–As–S semiconducting chalcogenide glasses have been studied under variable hydrostatic pressure up to 7.0 GPa. Two As–S glasses were investigated, the first at the stoichiometric composition As 2 S 3 (with critical mean coordination number value Z = 2.4) and the other S‐rich, non‐stoichiometric one belonging to the floppy network regime (AsS 4 , Z = 2.2), while the ternary Ge–As–S glass was on the rigid network side (Ge 25 As 10 S 65 , Z = 2.6). Reversible pressure‐induced effects have been observed in the floppy AsS 4 glass manifested by the amorphization of its crystalline sulphur domains. In contrast, the pressure‐induced appearance of homopolar Ge–Ge bonds and the formation of “ethanol‐like” S 3 Ge–GeS 3 units in the rigid ternary Ge 25 As 10 S 65 glass are irreversible, after pressure relief. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)