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Strain profile of the wall of semiconductor microtubes: A micro‐Raman study
Author(s) -
Bernardi A.,
Lacharmoise P. D.,
Goñi A. R.,
Alonso M. I.,
Vaccaro P. O.,
Saito N.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672547
Subject(s) - raman spectroscopy , semiconductor , materials science , strain (injury) , nanostructure , semiconductor nanostructures , phonon , relaxation (psychology) , tube (container) , semiconductor materials , nanotechnology , composite material , optoelectronics , condensed matter physics , optics , medicine , psychology , social psychology , physics
We have investigated three‐dimensional nanostructures consisting of microtubes fabricated by rolling‐up III–V semiconductor multilayers. Through micro‐Raman spectroscopy we were able to derive the depth profile of residual strain in the microtubes by monitoring the phonon shifts experienced by different layers buried inside the tube wall. By this procedure we were able to obtain the strain components at different depths moving from the outer to the inner surface of the tube wall. We compared them with the strain distribution calculated by elastic modeling, gaining insight into the strain relaxation processes that produce the final local nanostructure of semiconductor microtubes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)