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Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure
Author(s) -
Marko I. P.,
Adams A. R.,
Sweeney S. J.,
Massé N. F.,
Krebs R.,
Reithmaier J. P.,
Forchel A.,
Mowbray D. J.,
Skolnick M. S.,
Liu H. Y.,
Groom K. M.,
Hatori N.,
Sugawara M.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672544
Subject(s) - hydrostatic pressure , spontaneous emission , auger effect , radiative transfer , lasing threshold , atomic physics , quantum dot , wavelength , recombination , laser , band gap , chemistry , optoelectronics , materials science , physics , auger , optics , thermodynamics , biochemistry , gene
We present the results based upon a systematic study of the properties of quantum dot (QD) lasers with emission wavelengths around 0.98 and 1.3 µm at room temperature and atmospheric pressure. To investigate the radiative and non‐radiative components of the threshold current, we studied the temperature and high hydrostatic pressure dependencies of spontaneous and stimulated emission. Although important parameters such as lasing wavelength, QD density, ridge width, cavity length, threshold current density ( J th ) varied greatly, we found that all the lasers have nearly the same dependence of the radiative component, J rad , on band gap when it was tuned by the application of high pressure. It was observed that J rad increases strongly with band gap. Therefore the different dependencies of J th are explained in terms of the relative importance of different non‐radiative recombination mechanisms, such as Auger recombination and thermal carrier escape. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)