Premium
Effect of localized B and N states on the magneto‐transport of (B,Ga,In)As and (Ga,In)(N,As)
Author(s) -
Teubert J.,
Klar P. J.,
Heimbrodt W.,
Gottschalch V.,
Lindsay A.,
O'Reilly E. P.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672540
Subject(s) - condensed matter physics , magneto , electron transport chain , impurity , hydrostatic pressure , semiconductor , chemistry , electron , range (aeronautics) , materials science , physics , thermodynamics , optoelectronics , quantum mechanics , biochemistry , organic chemistry , composite material , combustion
Magneto‐transport properties of n‐ and p‐type (B,Ga,In)As and (Ga,In)(N,As) were studied in the temperature range from 2 to 300 K and in magnetic fields up to 10 T and at hydrostatic pressures up to 16 kbar. The magneto‐transport in (B,Ga,In)As and (Ga,In)(N,As) is very similar. P‐type samples show normal semiconductor behaviour whereas the electron transport in both alloys is strongly affected by the interaction of the free carriers with the density of states of localized B and N impurity states, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)