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Resonant impurity states in PbTe‐based alloys doped with gallium and chromium under pressure
Author(s) -
Skipetrov E.,
Golubev A.,
Pichugin N.,
Plastun A.,
Dmitriev N.,
Slyn'ko V.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672539
Subject(s) - hydrostatic pressure , fermi level , chromium , impurity , doping , gallium , hall effect , condensed matter physics , electrical resistivity and conductivity , pressure coefficient , materials science , dispersion (optics) , electron , chemistry , physics , metallurgy , thermodynamics , optics , organic chemistry , quantum mechanics
The galvanomagnetic effects in the n‐Pb 1– x Sn x Te:Ga ( x = 0.21) and n‐Pb 1– y Ge y Te:Cr ( y = 0.10) alloys at temperatures 4.2 ≤ T ≤ 300 K and under hydrostatic compression up to 17 kbar have been investigated. It is found that in almost the whole investigated pressure range in the samples investigated temperature dependencies of resistivity and Hall coefficient have a “metallic” character, indicating stabilization of the Fermi level by the impurity resonant levels. Using the experimental data in the framework of a two‐band Kane dispersion law the dependencies of the free electron concentration and the Fermi‐level position upon the pressure were calculated. The pressure coefficients of gallium and chromium deep‐level movement were obtained and the models of the electronic‐structure reconstruction under pressure were developed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)