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Pressure related defect engineering in silicon‐on‐insulator‐like structures produced by either oxygen or nitrogen ion implantation
Author(s) -
Antonova I. V.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672536
Subject(s) - silicon , silicon on insulator , annealing (glass) , oxygen , materials science , nitrogen , substrate (aquarium) , insulator (electricity) , layer (electronics) , optoelectronics , ion , nanotechnology , chemistry , composite material , oceanography , organic chemistry , geology
Pressure‐related effects in silicon‐on‐insulator‐like structures fabricated in either nitrogen or oxygen implanted silicon during subsequent annealing are analyzed. Among them are the removal of radiation defects from the top silicon layer, some degradation of the buried insulator, pressure dependence of charges at the Si/SiO 2 (or Si/SiN x ) interface, formation of the electrically active centers in the top silicon layer and the substrate. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)