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Threshold currents under pressure in InGaAsSb/AlGaAsSb laser diodes
Author(s) -
Adamiec P.,
Bohdan R.,
Bercha A.,
Dybala F.,
Trzeciakowski W.,
Rouillard Y.,
Joullié A.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672533
Subject(s) - auger effect , diode , atomic physics , laser , recombination , electron , auger , range (aeronautics) , leakage (economics) , optoelectronics , materials science , chemistry , physics , optics , nuclear physics , biochemistry , macroeconomics , economics , composite material , gene
Threshold currents in quantum well InGaAsSb lasers grown on GaSb substrates have been measured in the temperature range from 170 up to 320 K at pressures up to 20 kbar. These measurements were aiming at the identification of major recombination channels in these devices: Auger recombination involving spin–orbit split‐off band and leakage of electrons to p‐claddings. The emission lines shifted with pressure 12 meV per kbar. Our results indicated that the expected resonance of Auger recombination for E g = Δ does not occur in the studied pressure/temperature range. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)