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Two‐dimensional electrons at n‐GaAs/AlGaAs heterointerface under uniaxial compression
Author(s) -
Mini. Ya.,
Bogdanov E. V.,
Ilievsky A. A.,
Polyansky A. V.,
Kraak W.,
Savin A. M.,
Berman I. V.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672529
Subject(s) - condensed matter physics , anisotropy , electron , piezoelectricity , materials science , bar (unit) , heterojunction , quantum well , compression (physics) , physics , optics , composite material , quantum mechanics , laser , meteorology
It has been shown that under uniaxial compression P applied at low temperatures the transport properties of 2D electrons at a n‐(001)GaAs/Al x Ga 1– x As heterointerface are governed mainly by the piezoelectric field. It arises across the structure in the [001] direction when the stress is applied in the [110] or [1 $ \bar 1 $ 0] directions and causes the corresponding compensating redistribution of charges that increases the 2D electron concentration in a quantum well if P ‖[110] and decreases it if P ‖[1 $ \bar 1 $ 0]. The anisotropy of the 2D electron mobility does not significantly change under uniaxial stress up to 3.5 kbar and does not indicate the change of the energy spectrum anisotropy that takes place in a 2D hole system under compression. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)