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Excitation and pressure effects on photoluminescence from dislocation engineered silicon material
Author(s) -
Ishibashi Y.,
Kobayashi T.,
Prins A. D.,
Nakahara J.,
Lourenco M. A.,
Gwilliam R. M.,
Homewood K. P.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672525
Subject(s) - photoluminescence , silicon , materials science , luminescence , excitation , boron , absorption edge , dislocation , optoelectronics , diode , band gap , wavelength , photoluminescence excitation , penetration depth , laser , optics , chemistry , composite material , physics , organic chemistry , electrical engineering , engineering
We report the influence of excitation wavelength and pressure effects on the photoluminescence (PL) of silicon light‐emitting diode material fabricated by boron ion implantation. The PL spectra show an anomalous increase in total intensity as temperature elevates, and this luminescence is found to be strongest with decreasing laser penetration depth away from the sample surface. The PL peak position shifts towards lower energy at a rate of –14 meV/GPa with increasing pressure. This rate agrees with earlier optical measurements on the band‐edge absorption of silicon, confirming that this luminescence is closely related to phonon‐assisted indirect band gap transitions. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)