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Pressure dependence of photoluminescence of InAs/InP self‐assembled quantum wires
Author(s) -
RuizCastillo M.,
Segura A.,
Sans J. A.,
MartínezPastor J.,
Fuster D.,
González Y.,
González L.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672524
Subject(s) - photoluminescence , hydrostatic pressure , metastability , materials science , quantum dot , spectral line , molecular beam epitaxy , phase (matter) , condensed matter physics , optoelectronics , epitaxy , chemistry , nanotechnology , physics , organic chemistry , layer (electronics) , astronomy , thermodynamics
This paper investigates the electronic structure of self‐assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de‐convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock‐salt phase (7 GPa). (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)