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Raman study of semiconductor clathrates under high pressure
Author(s) -
Kume T.,
Fukushima T.,
Sasaki S.,
Shimizu H.,
Fukuoka H.,
Yamanaka S.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200672517
Subject(s) - clathrate hydrate , isostructural , raman spectroscopy , phase transition , semiconductor , crystallography , crystal structure , phase (matter) , derivative (finance) , chemistry , high pressure , materials science , hydrate , condensed matter physics , thermodynamics , organic chemistry , optoelectronics , optics , physics , financial economics , economics
In order to gain an insight into the mechanism of the isostructural phase transition observed previously for Ba 8 Si 46 compound, the high pressure Raman experiments have been performed for clathrate compounds of Ba 8 Au 6 Si 40 and Ba 8 Ge 3 Si 43 derivative from Ba 8 Si 46 by substituting Si with other atoms. The Ba 8 Ge 3 Si 43 clathrate indicated the occurrence of the phase transition at the same pressure as Ba 8 Si 46 but, the Ba 8 Au 6 Si 40 did not show up to 27 GPa. The present results suggest that a particular crystal site (6c site) plays an important role for the phase transition of the clathrate compounds. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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