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Intraband photodetection at 1.3–1.5 µm in self‐organized GaN/AlN quantum dots
Author(s) -
Doyennette L.,
Vardi A.,
Guillot F.,
Nevou L.,
Tchernycheva M.,
Lupu A.,
Colombelli R.,
Bahir G.,
Monroy E.,
Julien F. H.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200671610
Subject(s) - photodetection , responsivity , photodetector , quantum dot , optoelectronics , materials science , absorption (acoustics) , excited state , wavelength , physics , atomic physics , composite material
GaN/AlN quantum dot photodetectors based on intraband absorption and in‐plane carrier transport have been fabricated and characterized. These photodetectors operate at room temperature at telecommunication wavelengths (1.3–1.55 μm). Their TM‐polarized intraband absorption is ascribed to the transition from the ground state s to the excited state p z of the GaN dots. The responsivity peaked at 1.41 μm is as high as 8 mA/W at room temperature for the interdigitated contact photodetector. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)