Growth of GaN quantum dots on nonpolar  A  ‐plane SiC by molecular‐beam epitaxy | Zendy

Founta S. | Zendy; Rol F. | Zendy; BelletAmalric E. | Zendy; Sarigiannidou E. | Zendy; Gayral B. | Zendy; Moisson C. | Zendy; Mariette H. | Zendy; Daudin B. | Zendy

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Growth of GaN quantum dots on nonpolar A ‐plane SiC by molecular‐beam epitaxy

Author(s) -

Founta S.,

Rol F.,

BelletAmalric E.,

Sarigiannidou E.,

Gayral B.,

Moisson C.,

Mariette H.,

Daudin B.

Publication year - 2006

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200671534

Subject(s) - molecular beam epitaxy , quantum dot , materials science , superlattice , transmission electron microscopy , optoelectronics , epitaxy , anisotropy , spectroscopy , optics , layer (electronics) , nanotechnology , physics , quantum mechanics

We report on A ‐plane GaN quantum dots in AlN, grown on A ‐plane 6H SiC substrates by plasma‐assisted molecular‐beam epitaxy. AFM imaging revealed a strong alignment of the dots along the [1 $ \bar 1 $ 00] direction that we correlated with the anisotropic morphology of the AlN buffer layer. A vertical correlation of these dots was evidenced by high resolution transmission electron microscopy on superlattice samples with an AlN spacer thickness of 5 nm. Time‐resolved spectroscopy performed on both C ‐plane and A ‐plane samples revealed much shorter radiative lifetimes for the A ‐plane dots, indicating a strong reduction of the internal electric field with respect to the one present in their C ‐plane counterparts. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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