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Growth of GaN quantum dots on nonpolar A ‐plane SiC by molecular‐beam epitaxy
Author(s) -
Founta S.,
Rol F.,
BelletAmalric E.,
Sarigiannidou E.,
Gayral B.,
Moisson C.,
Mariette H.,
Daudin B.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200671534
Subject(s) - molecular beam epitaxy , quantum dot , materials science , superlattice , transmission electron microscopy , optoelectronics , epitaxy , anisotropy , spectroscopy , optics , layer (electronics) , nanotechnology , physics , quantum mechanics
We report on A ‐plane GaN quantum dots in AlN, grown on A ‐plane 6H SiC substrates by plasma‐assisted molecular‐beam epitaxy. AFM imaging revealed a strong alignment of the dots along the [1 $ \bar 1 $ 00] direction that we correlated with the anisotropic morphology of the AlN buffer layer. A vertical correlation of these dots was evidenced by high resolution transmission electron microscopy on superlattice samples with an AlN spacer thickness of 5 nm. Time‐resolved spectroscopy performed on both C ‐plane and A ‐plane samples revealed much shorter radiative lifetimes for the A ‐plane dots, indicating a strong reduction of the internal electric field with respect to the one present in their C ‐plane counterparts. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)