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Hole and electron wave functions in self‐assembled InAs quantum dots: a comparison
Author(s) -
Reuter D.,
Kailuweit P.,
Roescu R.,
Wieck A. D.,
Wibbelhoff O. S.,
Lorke A.,
Zeitler U.,
Maan J. C.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200671520
Subject(s) - electron , condensed matter physics , quantum dot , physics , ground state , position and momentum space , wave function , magnetic field , chemistry , atomic physics , optoelectronics , quantum mechanics
We have investigated the conduction and the valence band states of self‐assembled InAs quantum dots embedded in n‐ and p‐type Schottky diodes, respectively, by magneto‐capacitance voltage spectroscopy. The dispersion behaviour of the individual charging peaks in a perpendicular magnetic field shows qualitative differences between the two carrier types. By applying an in‐plane magnetic field, the momentum space wave function corresponding to the individual charging peaks could be mapped. For electrons, the s‐like wave function for the ground state is slightly asymmetric with the low energy direction along [0 $ \bar 1 $ 1] in real space. Also the s‐like wave function for the hole ground state is asymmetric but here the low energy direction is along [011], i.e. orthogonal to that for electrons. This hints to an asymmetry in the confinement potential that is caused by piezoelectric effects. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)