Resistivity measurements of Mo 6 S 3 I 6 nanowire networks

We present measurements of resistivity on Mo 6 S 3 I 6 nanowire networks as a function of temperature, moisture and high‐temperature processing conditions. The room‐temperature conductivity of as‐grown material is s 300 K ∼ 0.04 S/m with a linear I – V characteristic. The temperature dependence of conductivity of pristine samples closely follows the expression s = s 0 exp (– T 0 / T ) b , where b = 1/4. Removal of interstitial iodine from the network by annealing in vacuum gives rise to a cross‐over to b = 1/2 and an increase in conductivity. Different scenarios for observed cross‐over are discussed. The introduction of water vapour leads to a decrease in conductivity and reveals that the resistivity of the network is sensitive to interstitial water molecules, which is interesting for potential chemical sensor applications. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)