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Current‐carrying capacity of semiconducting carbon nanotubes
Author(s) -
Chen YungFu,
Fuhrer Michael S.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200669170
Subject(s) - carbon nanotube , saturation (graph theory) , materials science , phonon , boltzmann equation , condensed matter physics , current (fluid) , velocity saturation , scattering , limiting , boltzmann constant , nanotechnology , metal , voltage , optics , physics , thermodynamics , mechanical engineering , mathematics , mosfet , engineering , transistor , combinatorics , quantum mechanics , metallurgy
A simple Boltzmann‐equation model for charge transport in semiconducting single‐walled carbon nanotubes (s‐SWNTs) is developed with two adjustable parameters, the acoustic and optical phonon scattering lengths. The model predicts velocity saturation rather than current saturation in s‐SWNTs at high bias, in agreement with a recent experiment. At moderate densities, the model predicts currents in s‐SWNTs exceeding 25 µA, the limiting current in long metallic single‐walled carbon nanotubes. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)