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Electrical transport measurements of nanotubes with known ( n , m ) indices
Author(s) -
Chandra Bhupesh,
Caldwell Robert,
Huang Mingyuan,
Huang Limin,
Sfeir Matthew Y.,
O'Brien Stephen P.,
Heinz Tony F.,
Hone James
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200669130
Subject(s) - characterization (materials science) , carbon nanotube , materials science , wafer , nanotube , fabrication , nanotechnology , substrate (aquarium) , lithography , diffraction , electron beam lithography , chirality (physics) , electron diffraction , optoelectronics , optics , resist , physics , medicine , oceanography , alternative medicine , nambu–jona lasinio model , chiral symmetry breaking , pathology , layer (electronics) , quantum mechanics , quark , geology
Because subtle changes in physical structure (chirality) can cause the electronic structure of carbon nanotubes to vary from metallic to semiconducting, the goal of fully controlled nanotube device fabrication has proved elusive. Using a mechanical transfer technique in parallel with optical characterization, we have achieved the goal of placing ‘the nanotube we want, where we want it’. Long nanotubes are grown by CVD across a slit etched through a Si wafer and then examined by Rayleigh scattering. By combining this technique with structural characterization by electron diffraction, we are able to map each spectrum to a unique ( n , m ) structure. After structural characterization, a chosen nanotube can be transferred to a substrate in the desired location, and devices fabricated using standard e‐beam lithography techniques. We have fabricated a number of devices in this manner and are beginning to fully explore the detailed relationship between structure and transport. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)