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Electrical transport properties of hot wall epitaxially grown para ‐sexiphenyl nano‐needles
Author(s) -
Birendra Singh Th.,
HernandezSosa G.,
Neugebauer H.,
Andreev A.,
Sitter H.,
Sariciftci N. S.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200669119
Subject(s) - perpendicular , epitaxy , materials science , mica , monocrystalline silicon , anisotropy , charge carrier , space charge , nano , electrical current , voltage , charge (physics) , electron mobility , condensed matter physics , optoelectronics , composite material , layer (electronics) , silicon , optics , electrical engineering , physics , geometry , mathematics , quantum mechanics , engineering , electron
Highly ordered anisotropic para ‐sexiphenyl (6P) films with nano‐needle structures, grown by hot wall epitaxy (HWE) on monocrystalline mica substrates, were prepared. The current–voltage ( I–V ) behaviour of gap‐type devices with current parallel and perpendicular to the needle axis was studied. From a space‐charge‐limited current (SCLC) regime in the I–V curves the charge carrier mobility was determined. When measured along the direction of needles, an effective charge carrier mobility as high as 14 cm 2 /Vs was obtained. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)