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Electron spin dephasing in n‐doped CdTe/(Cd, Mg)Te quantum wells
Author(s) -
Bratschitsch R.,
Chen Z.,
Cundiff S. T.,
Yakovlev D. R.,
Karczewski G.,
Wojtowicz T.,
Kossut J.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200668015
Subject(s) - dephasing , electron , quantum well , spin (aerodynamics) , condensed matter physics , chemistry , electron density , spin polarization , doping , polarization (electrochemistry) , cadmium telluride photovoltaics , physics , atomic physics , quantum mechanics , laser , optoelectronics , thermodynamics
We measure the spin dephasing time, T * 2 , of electrons in CdTe/(Cd, Mg)Te single quantum wells with various levels of n‐doping using the time‐resolved Kerr rotation technique. The formation of negatively charged trions causes strong spin polarization of the two‐dimensional electron gas (2DEG). We find the maximum spin dephasing time in the quantum well with a 2DEG density of 8 × 10 10 cm −2 . (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)