Structure and energy of the partial dislocation cores in GaAs | Zendy

Beckman S. P. | Zendy; Chrzan D. C. | Zendy

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Structure and energy of the partial dislocation cores in GaAs

Author(s) -

Beckman S. P.,

Chrzan D. C.

Publication year - 2006

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200666808

Subject(s) - partial dislocations , dislocation , semiconductor , core (optical fiber) , crystallography , materials science , condensed matter physics , chemistry , physics , optoelectronics , composite material

A methodology for investigating isolated α and β partial dislocations in III–V semiconductors is presented. Using this method the 30° and 90°, α and β partial dislocations in GaAs are investigated. The structures of the proposed core reconstructions are investigated. For the 90° partials, two reconstructions have been proposed. The relative energies of the two reconstructions are investigated in addition to the structural investigation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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