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Structure and energy of the partial dislocation cores in GaAs
Author(s) -
Beckman S. P.,
Chrzan D. C.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200666808
Subject(s) - partial dislocations , dislocation , semiconductor , core (optical fiber) , crystallography , materials science , condensed matter physics , chemistry , physics , optoelectronics , composite material
A methodology for investigating isolated α and β partial dislocations in III–V semiconductors is presented. Using this method the 30° and 90°, α and β partial dislocations in GaAs are investigated. The structures of the proposed core reconstructions are investigated. For the 90° partials, two reconstructions have been proposed. The relative energies of the two reconstructions are investigated in addition to the structural investigation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)