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A moving screw dislocation interacting with an imperfect piezoelectric bimaterial interface
Author(s) -
Wang X.,
Pan E.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200642586
Subject(s) - piezoelectricity , dislocation , antiplane shear , materials science , electric field , mechanics , peierls stress , imperfect , physics , composite material , dislocation creep , fracture mechanics , stress intensity factor , linguistics , philosophy , quantum mechanics
Closed‐form solutions in terms of exponential integrals are derived for a constantly moving screw dislocation in a piezoelectric bimaterial with an imperfect interface. The imperfect interface discussed here is mechanically compliant and dielectrically weakly (or highly) conducting. The electroelastic fields due to the moving dislocation, such as stresses, strains, electric displacements and electric fields, are obtained for this bimaterial. The solutions derived here are valid when the moving velocity of the screw dislocation is below the Bleustein–Gulyaev wave speeds of the two piezoelectric half‐planes. This restriction is different from that in a perfectly bonded bimaterial where the moving velocity of the screw dislocation is below the piezoelectrically stiffened bulk shear wave speeds of the two piezoelectric half‐planes. Numerical results are also presented to demonstrate the influence of the interface imperfection and the velocity of the moving dislocation on the electroelastic fields in the piezoelectric bimaterial. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)