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A comparison of two‐particle models for conduction electron scattering on hydrogen‐like impurity ions in non‐degenerate semiconductors
Author(s) -
Poklonski N. A.,
Kocherzhenko A. A.,
Vyrko S. A.,
Vlassov A. T.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200642528
Subject(s) - scattering , ion , electron , impurity , thermal conduction , degenerate energy levels , ionized impurity scattering , atomic physics , semiconductor , electron scattering , degenerate semiconductor , conduction electron , condensed matter physics , chemistry , physics , optics , quantum mechanics , organic chemistry
Models of electron mobility limited by scattering of conduction electrons on hydrogen‐like impurity ions in non‐degenerate crystalline semiconductors are discussed. It is shown that the best agreement with experimental data is given by a model earlier proposed by the authors, in which the time of electron‐ion interaction, equal to the time of transfer of a conduction electron across a spherical region corresponding to one impurity ion in the crystal, is taken into account, the minimum scattering angle is chosen according to Conwell–Weisskopf, and scattering acts of an electron on impurity ions are considered independent and incompatible events. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)