Premium
Current mechanism in SbSeI crystals based on phonon‐assisted tunnelling emission
Author(s) -
Audzijonis A.,
Sereika R.,
Lapeika V.,
Žaltauskas R.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200642438
Subject(s) - quantum tunnelling , polaron , condensed matter physics , phonon , electron , thermal conduction , materials science , conduction band , effective mass (spring–mass system) , tunnel effect , range (aeronautics) , atmospheric temperature range , physics , thermodynamics , quantum mechanics , composite material
Single crystals of SbSeI were grown by the vapour phase technique. Reverse current–voltage ( I – V ) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon‐assisted electron tunnelling from the local levels in the metal–crystal interface to the conduction band. Calculated values: electron–phonon interaction, depth of the trap and effective mass of the polaron enabled us to estimate the electron tunnelling probability. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)