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Transport and mobility properties of wurtzite InN and GaN
Author(s) -
Yarar Zeki
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200642433
Subject(s) - wurtzite crystal structure , indium nitride , gallium nitride , electron mobility , electron , electric field , materials science , condensed matter physics , nitride , indium , electron transport chain , monte carlo method , wide bandgap semiconductor , optoelectronics , chemistry , nanotechnology , physics , zinc , mathematics , biochemistry , statistics , layer (electronics) , quantum mechanics , metallurgy
The results of an ensemble Monte Carlo model of the electron transport in wurtzite gallium nitride (GaN) and indium nitride (InN) are presented. There is a controversy over the material parameters of InN, therefore the recently reported and the traditionally accepted parameter values for InN are used in simulations and the results are compared. The steady‐state and transient electron transport characteristics are analyzed and the valley populations of electrons are determined as a function of electric field. The low‐field mobility of electrons is also obtained as a function of temperature and over a wide range of carrier concentrations. It is seen that with the recently published material parameters the peak velocity of carriers in InN increases significantly, while the field at which it is attained decreases. The calculated maximum low field mobility at 300 K in InN with the recent material parameters is about 10000 cm 2 /V s for low carrier concentrations. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)