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An optical excitation study of Ru‐, Rh‐, Re‐ and Os‐doped Bi 12 SiO 20 crystals
Author(s) -
Skorikov V. M.,
Milenov T. I.,
Egorysheva A. V.,
Rafailov P. M.,
Dudkina T. D.,
Veleva M. N.,
Vasil'ev A. Ya.,
Gospodinov M. M.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200642418
Subject(s) - photocurrent , doping , absorption (acoustics) , photoconductivity , impurity , analytical chemistry (journal) , attenuation coefficient , excitation , chemistry , absorption spectroscopy , materials science , atomic physics , optics , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics , composite material
We studied the influence of doping with 4d and 5d elements on the optical and photo‐induced properties of Bi 12 SiO 20 (BSO) crystals. Doping with Ru, Rh and Re does not significantly influence BSO absorption spectra as well as photo‐induced absorption and photocurrent in BSO. On the other hand, doping with Os with concentration of 0.0004 mass% increases by more than an order of magnitude the illumination response time, the strength of the photochromic effect and photocurrent, all this being accompanied by only a slight change of the absorption coefficient as compared to undoped BSO. The observed effects are explained in the framework of the Rose model assuming that doping with Os creates deep levels in the gap that act as recombination centers with a very little cross‐section of electron capture. We also studied the kinetic curves of photocurrent increase and decrease in BSO:Os which enabled us to determine the magnitude of the cross‐section of a photon capture at an impurity center. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)