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Electronic and optical properties of SiC polytypes using a transferable semi‐empirical tight‐binding model
Author(s) -
Laref A.,
Laref S.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200642312
Subject(s) - tight binding , wurtzite crystal structure , materials science , electronic structure , silicon carbide , hamiltonian (control theory) , hexagonal crystal system , electronic band structure , molecular physics , crystallography , condensed matter physics , chemistry , mathematics , physics , composite material , mathematical optimization
The semi‐empirical tight‐binding (TB) method within the sp 3 s* basis has been used to investigate the electronic structure and optical properties of silicon carbide (SiC) polytypes. A TB model for the electronic structure calculations of the (4H, 6H and 8H) SiC polytypes is presented. The procedure involves the construction of the TB Hamiltonian of the (4H, 6H and 8H) SiC polytypes from the wurtzite one. The set of TB parameters is transferable to all hexagonal structures, which overcomes the need for extensive experimental data. The band structures for different SiC polytypes are used to determine the electron effective masses. The results are shown to be consistent with available experimental data and other theoretical calculations. Furthermore, the joint densities of states are calculated. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)